ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,380,030, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Yongin-si, South Korea).
"Persistent storage with dual interface" was invented by Shuyi Pei (Santa Clara, Calif.), Jing Yang (Glen Allen, Va.) and Rekha Pitchumani (Oak Hill, Va.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Systems and methods for persistent storage with a dual interface. In some embodiments, a persistent storage device includes: a processing circuit; a cache; and persistent storage. The processing circuit may be configured to perform a method, the method including: receiving a first write request according to a first protocol; saving a data payload of the first w...