ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,380,943, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Non-volatile memory device" was invented by Changbum Kim (Suwon-si, South Korea) and Sunghoon Kim (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes a first semiconductor layer and a second semiconductor layer arranged in the vertical direction. A first semiconductor layer includes a plurality of memory cells, and a plurality of metal lines extending in a first direction, and including first bit lines, second bit lines, and a common source line tapping wire between the first bit lines and the second bi...