US Patent Issued to SAMSUNG ELECTRONICS on Aug. 5 for "Multi-bridge channel field effect transistor with reduced gate-channel leakage current" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,681, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Multi-bridge channel field effect transistor with reduced gate-channel leakage current" was invented by Doohyun Lee (Hwaseong-si, South Korea), Heonjong Shin (Yongin-si, South Korea), Seonbae Kim (Hwaseong-si, South Korea), Sungmin Kim (Incheon, South Korea), Jinyoung Park (Hwaseong-si, South Korea) and Hyunho Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes: an active pattern provided on a substrate having an upper surface; an insulation pattern provided above th...