ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,380,952, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Memory device including pass transistor circuit" was invented by Seungyeon Kim (Seoul, South Korea), Daeseok Byeon (Seongnam-si, South Korea), Pansuk Kwak (Goyang-si, South Korea) and Hongsoo Jeon (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: a memory cell array including a first memory block and a second memory block adjacently disposed in a first direction, driving signal lines respectively corresponding to vertically stacked word lines, and a pass transistor circuit including an odd number of pass transistor groups ...