ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,716, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).
"Integrated circuit device" was invented by Seojin Jeong (Suwon-si, South Korea), Jungtaek Kim (Suwon-si, South Korea), Moonseung Yang (Suwon-si, South Korea), Sumin Yu (Suwon-si, South Korea), Edward Namkyu Cho (Suwon-si, South Korea), Seokhoon Kim (Suwon-si, South Korea) and Pankwi Park (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a fin-type active region, a channel region on the fin-type active region, a gate line surrounding the channel region on the fin-type active region, a source/drain...