US Patent Issued to SAMSUNG ELECTRONICS on Aug. 5 for "Epitaxial wafer and semiconductor memory device using the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,672, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Epitaxial wafer and semiconductor memory device using the same" was invented by Junga Lee (Suwon-si, South Korea), Yeonsook Kim (Hwaseong-si, South Korea) and Wooseung Jung (Busan, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial wafer and a semiconductor memory device, the epitaxial wafer including a semiconductor substrate having a front surface and a rear surface opposite to each other; a strain relaxed buffer (SRB) layer on and entirely covering the front surface of the semiconductor substrate; and a multi-stack on and entirely cov...