ALEXANDRIA, Va., Aug. 6 -- United States Patent no. RE50,519, issued on Aug. 5, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Cross-point memory device and method for converting and storing write data and associated parity to achieve uniform bit error rates" was invented by Eun-chu Oh (Hwaseong-si, South Korea), Pil-sang Yoon (Hwaseong-si, South Korea), Jun-jin Kong (Yongin-si, South Korea) and Hong-rak Son (Anyang-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating a resistive memory system including a plurality of layers may include receiving a write request and first data corresponding to a first address, converting the first address into a seco...