US Patent Issued to SAMSUNG ELECTRONICS on Aug. 26 for "Vertical channel semiconductor device with ferroelectric-insulator gate stack" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,321, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Vertical channel semiconductor device with ferroelectric-insulator gate stack" was invented by Hyuncheol Kim (Seoul, South Korea), Yongseok Kim (Suwon-si, South Korea), Dongsoo Woo (Seoul, South Korea) and Kyunghwan Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of first conductive lines extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, the first direction and second direction being horizontal directions, a plurality of ...