ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,314, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Three-dimensional semiconductor memory devices" was invented by Jaehyun Yang (Suwon-si, South Korea), Bio Kim (Seoul, South Korea), Yujin Kim (Suwon-si, South Korea), Kyong-Won An (Seoul, South Korea), Sookyeom Yong (Hwaseong-si, South Korea), Junggeun Jee (Siheung-si, South Korea) and Youngjun Cheon (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second ...