US Patent Issued to SAMSUNG ELECTRONICS on Aug. 26 for "Semiconductor memory device having shield layer between peripheral circuit and cell array structures" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,301, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device having shield layer between peripheral circuit and cell array structures" was invented by Min Hee Cho (Suwon-si, South Korea), Min Tae Ryu (Suwon-si, South Korea), Huije Ryu (Suwon-si, South Korea), Sungwon Yoo (Suwon-si, South Korea), Yongjin Lee (Suwon-si, South Korea) and Wonsok Lee (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are semiconductor memory devices and their fabrication methods. The semiconductor memory device comprises a peripheral circuit structure including peripheral circuits ...