US Patent Issued to SAMSUNG ELECTRONICS on Aug. 26 for "Semiconductor integrated circuit device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,406, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor integrated circuit device and manufacturing method thereof" was invented by Changhee Kim (Suwon-si, South Korea), Kyungsoo Kim (Hwaseong-si, South Korea), Dongil Bae (Seongnam-si, South Korea) and Sungman Whang (Yongin-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor integrated circuit device including a substrate with a first element region of a P type and a second element region of an N type, a channel active region that extends in the first element region or the second element region, the channel active region...