ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,308, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device including stack structure and trenches" was invented by Seung Hyun Cho (Seoul, South Korea), Kwang Ho Lee (Hwaseong-si, South Korea), Ji Hwan Yu (Suwon-si, South Korea) and Jong Soo Kim (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a plurality of blocks on a substrate. Trenches are disposed between the plurality of blocks. Conductive patterns are formed inside the trenches. A lower end of an outermost trench among the trenches is formed at a level higher than a level of a lower end o...