ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,306, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor device having peripheral circuit areas at both sides of substrate and data storage system including the same" was invented by Jiwon Kim (Seoul, South Korea), Jaeho Ahn (Seoul, South Korea), Sungmin Hwang (Hwaseong-si, South Korea), Joonsung Lim (Seongnam-si, South Korea) and Sukkang Sung (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a cell area including a first substrate, gate electrodes on the first substrate, a channel structure extending through the gate electrodes, cell contact ...