ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,907, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).
"Semiconductor device" was invented by Youncheol Jeong (Hwaseong-si, South Korea), Jaeung Koo (Seoul, South Korea), Boun Yoon (Suwon-si, South Korea) and Ilyoung Yoon (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a substrate including an active pattern extending in a first direction, a gate electrode extending in a second direction and crossing the active pattern, a gate capping pattern covering a top surface of the gate electrode, and a separation structure at a side of the gate electrode and...