ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,400, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Multi gate semiconductor device" was invented by Nam Kyu Cho (Yongin-si, South Korea), Seok Hoon Kim (Suwon-si, South Korea), Sang Gil Lee (Ansan-si, South Korea) and Pan Kwi Park (Incheon, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first active pattern having a first lower pattern and a first sheet pattern on the first lower pattern. First gate structures include a first gate electrode. A second active pattern includes a second lower pattern. A second sheet pattern is on the second lower pattern. Second ga...