US Patent Issued to SAMSUNG ELECTRONICS on Aug. 26 for "Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound" (South Korean, Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,398,166, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compound" was invented by Soyoung Lee (Suwon-si, South Korea), Hiroshi Nihei (Ube, Japan), Masashi Shirai (Ube, Japan), Jaesoon Lim (Seoul, South Korea) and Younjoung Cho (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of selectively forming a cobalt metal layer includes supplying a cobalt compound represented by Chemical Formula (1) onto a substrate that includes a wiring line of a late...