ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,424, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Method of OPC modeling" was invented by Donghoon Kuk (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of optical proximity correction (OPC) modeling, a resist image (RI) model is generated from an aerial image (AI) of a pattern. A light intensity of a portion having a level lower than a truncation level is replaced with the truncation level in an image profile of the RI model. The image profile is smoothed to remove a sharp point in the image profile. A Laplacian kernel is applied to the image profile to generate a conto...