ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,691, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Memory device and method for training per-pin operation parameters" was invented by Garam Choi (Suwon-si, South Korea), Yonghun Kim (Suwon-si, South Korea) and Kihan Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory device and a method for training per-pin operation parameters. A memory device includes a plurality of on-die termination (ODT) circuits, an impedance control (ZQ) calibration circuit configured to output a first code signal and a second code signal, and a per-pin calibration circuit. The per-pin ca...