ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,401,192, issued on Aug. 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"ESD protection for integrated circuit devices" was invented by Darryl G. Walker (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include electrostatic discharge (ESD) protection circuit structures. The ESD protection circuit structures may be formed ...