US Patent Issued to SAMSUNG ELECTRONICS on Aug. 19 for "Setting optimal threshold voltages for reading data from a memory device based on a channel distribution" (Israeli Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,486, issued on Aug. 19, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Setting optimal threshold voltages for reading data from a memory device based on a channel distribution" was invented by Tal Philosof (Givatayim, Israel), Lior Kissos (Netanya, Israel), Ariel Doubchak (Herzliya, Israel) and Amit Berman (Binyamina, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory system, a method of reading data and a method of finding read thresholds. The method of finding read thresholds includes: selecting a channel distribution among a plurality of channel distributions that corresponds to a read page of the ...