ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,379, issued on Aug. 19, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor devices" was invented by Changyup Park (Hwaseong-si, South Korea), Dongho Ahn (Suwon-si, South Korea), Donggeon Gu (Hwaseong-si, South Korea), Wonjun Park (Hwaseong-si, South Korea) and Jinwoo Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes gate electrodes on a substrate, a channel and a resistance pattern. The gate electrodes are spaced apart from each other in a vertical direction substantially perpendicular to an upper surface of the substrate. The channel extends through the gate elec...