US Patent Issued to SAMSUNG ELECTRONICS on Aug. 19 for "Pattern formation method and semiconductor device fabrication method using the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,150, issued on Aug. 19, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Pattern formation method and semiconductor device fabrication method using the same" was invented by Dohee Kim (Seoul, South Korea), Sunguk Jang (Hwaseong-si, South Korea), Sahwan Hong (Suwon-si, South Korea) and Kongsoo Lee (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A pattern formation method includes forming a first capping layer on a substrate, forming a recess that penetrates the first capping layer and an upper portion of the substrate, such that a non-penetrated portion of the first capping layer constitutes a first capp...