ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,392,664, issued on Aug. 19, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"IR sensor with nano-structure" was invented by Jangwoo You (Suwon-si, South Korea), Jinmyoung Kim (Suwon-si, South Korea), Wontaek Seo (Suwon-si, South Korea), Byonggwon Song (Suwon-si, South Korea), Yongseop Yoon (Suwon-si, South Korea), Duhyun Lee (Suwon-si, South Korea) and Choongho Rhee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An infrared sensor includes a substrate, a reflective layer on an upper surface of the substrate, and a composite layer including an absorption layer including a nanostructure and configured to absorb...