US Patent Issued to SAMSUNG ELECTRONICS on Aug. 19 for "Integrated circuit device including vertical memory device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. RE50,547, issued on Aug. 19, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).

"Integrated circuit device including vertical memory device and method of manufacturing the same" was invented by Shin-Hwan Kang (Seoul, South Korea), Young-Hwan Son (Hwaseong-si, South Korea), Dong-seog Eun (Seongnam-si, South Korea), Chang-sup Lee (Hwaseong-si, South Korea) and Jae-hoon Jang (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, the semiconductor device includes a stack of alternating interlayer insulating layers and conductive layers on a substrate. Each of the conductive layers extends in a first di...