US Patent Issued to SAMSUNG ELECTRONICS on Aug. 12 for "Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel pattern" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,630, issued on Aug. 12, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Vertical channel transistor including a graphene insertion layer beweeen a source/drain electrode and a channel pattern" was invented by Kyung-Eun Byun (Seongnam-si, South Korea), Sangwon Kim (Seoul, South Korea), Changhyun Kim (Seoul, South Korea), Keunwook Shin (Yongin-si, South Korea) and Changseok Lee (Gwacheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical channel transistor includes a first source/drain electrode; a second source/drain electrode spaced apart from the first source/drain electrode in a first direction; a f...