US Patent Issued to SAMSUNG ELECTRONICS on Aug. 12 for "Three dimensional semiconductor memory device and method for fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,601, issued on Aug. 12, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).

"Three dimensional semiconductor memory device and method for fabricating the same" was invented by Sang-Yong Park (Suwon-si, South Korea) and Jintaek Park (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor device includes a stacked structure including a plurality of conductive layers stacked on a substrate, a distance along a first direction between sidewalls of an upper conductive layer and a lower conductive layer being smaller than a distance along a second direction between sidewalls of the upper ...