ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,604, issued on Aug. 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Three-dimensional ferroelectric random-access memory (FeRAM)" was invented by Yung-Tin Chen (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A 3-dimensional vertical memory string array includes high-speed ferroelectric field-effect transistor (FET) cells that are low-cost, low-power, or high-density and suitable for SCM applications. The memory circuits of the present invention provide random-access capabilities. The memory string may be formed above a planar surface of substrate and include a vertical gate electrode extending lengthwise al...