US Patent Issued to SAMSUNG ELECTRONICS on Aug. 12 for "Semiconductor device including backside contact structure with silicide layer formed in FEOL process" (New York, Virginia Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,660, issued on Aug. 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device including backside contact structure with silicide layer formed in FEOL process" was invented by Wonkeun Chung (Clifton Park, N.Y.), Byounghoon Kim (Rexford, N.Y.), Jongjin Lee (Clifton Park, N.Y.) and Kang-ill Seo (Springfield, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including backside contact structure with a silicide layer formed in an FEOL process, and a method of manufacturing the same. The method includes: forming a channel structure on a substrate; forming a placeholder structure in ...