ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,688, issued on Aug. 12, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-Do, South Korea).

"Semiconductor device having dielectric layers of varying thicknesses" was invented by Juyoun Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a semiconductor device comprising a substrate including a peripheral region and a logic cell region, a first channel pattern including a first and a second semiconductor pattern stacked vertically on the peripheral region, a first gate electrode across the first channel pattern and extending in a first direction, a second channel pattern including a third and a fourth semicond...