ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,388,022, issued on Aug. 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor device" was invented by Jun Ki Park (Hwaseong-si, South Korea), Yoon Tae Hwang (Seoul, South Korea), Wan Don Kim (Seongnam-si, South Korea), Sung Hwan Kim (Hwaseong-si, South Korea) and Tae Yeol Kim (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure including a gate electrode on a substrate. A source/drain pattern is on the substrate and positioned on a side surface of the gate electrode. A source/drain contact is on the source/drain pattern. A first conductive pad is on t...