ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,933, issued on Aug. 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Method for forming photoresist pattern and method for forming pattern on a substrate" was invented by Gyeyoung Kim (Suwon-si, South Korea), Woojin Jung (Suwon-si, South Korea), Soonmok Ha (Suwon-si, South Korea), Junsik Yu (Suwon-si, South Korea) and Seungkyo Lee (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for forming a photoresist pattern, in which a silicon oxide layer is formed on a substrate. A first photoresist pattern, which contacts the silicon oxide layer, is formed on the silicon oxide layer. Entire-s...