ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,807, issued on Aug. 12, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Memory device, system and method employing multiphase clock" was invented by Hyochang Kim (Suwon-si, South Korea) and Changsik Yoo (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a DC conversion circuit that receives a first edge-triggered phase signal having first pulses each extending from a rising edge of a first phase signal of a multiphase clock to a later rising edge of a second phase signal of the multiphase clock and a second edge-triggered phase signal having second pulses each extending from a rising...