ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,402, issued on April 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Vertical nonvolatile memory device including memory cell string" was invented by Minhyun Lee (Suwon-si, South Korea), Taein Kim (Seoul, South Korea), Youngtek Oh (Suwon-si, South Korea), Hyeonjin Shin (Suwon-si, South Korea) and Changseok Lee (Gwacheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a vertical nonvolatile memory device in which a thickness of one memory cell is reduced to reduce an entire thickness of a memory cell string and increase the number of stacked memory cells. The nonvolatile memory device includes a...