US Patent Issued to SAMSUNG ELECTRONICS on April 8 for "Three-dimensional semiconductor memory device and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,062, issued on April 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Three-dimensional semiconductor memory device and electronic system including the same" was invented by Younjeong Hwang (Hwaseong-si, South Korea), Minbum Kim (Hwaseong-si, South Korea), Hojun Seong (Suwon-si, South Korea), Sung-Hun Lee (Yongin-si, South Korea) and Juneon Jin (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional semiconductor memory device may include a source structure on a substrate, a stack structure including electrode layers and inter-electrode insulating layers, which are on the source structure...