ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,092, issued on April 8, was assigned to SAMSUNG ELECTRONICS Co. LTD. (South Korea).

"Resistance measuring structures of stacked devices" was invented by Byounghak Hong (Albany, N.Y.), Seunghyun Song (Albany, N.Y.), Myunggil Kang (Hwaseong-si, South Korea) and Kang-Ill Seo (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Resistance measuring structures for a stacked integrated circuit device are provided. The resistance measuring structures may include a first Complementary Field Effect Transistor (CFET) stack, a second CFET stack, and a conductive connection. The first CFET may include a first upper transistor that includes a first upper...