ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,555, issued on April 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).
"Methods of forming semiconductor devices" was invented by Jinyoung Park (Anyang-si, South Korea), Jungpyo Hong (Gwangmyeong-si, South Korea), Yangdoo Kim (Seoul, South Korea), Yonghwan Kim (Hwaseong-si, South Korea) and Sangwuk Park (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a semiconductor device may include: providing a substrate on which a layer is formed; forming a lower hard-mask layer, which includes silicon, on the layer; forming an upper hard-mask pattern, which includes oxide, on the lower hard-mask layer; fo...