US Patent Issued to SAMSUNG ELECTRONICS on April 8 for "Memory device configured to reduce degradation of adjacent word lines and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,403, issued on April 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Memory device configured to reduce degradation of adjacent word lines and operating method thereof" was invented by Myoung-Ho Son (Gyeonggi-do, South Korea), Doo-Yeun Jung (Suwon-si, South Korea) and Sung-Kwan Jung (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An operating method of a memory device includes: acquiring an address of a first bad word line, the first bad word line included in a plurality of word lines of the memory device; detecting whether word lines adjacent to the first bad word line are bad based on the address of ...