ALEXANDRIA, Va., April 9 -- United States Patent no. 12,271,266, issued on April 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Yongin-si, South Korea).
"Fault resilient storage device" was invented by Yang Seok Ki (Palo Alto, Calif.), Sungwook Ryu (Palo Alto, Calif.), Seontaek Kim (Sammamish, Wash.), Changho Choi (San Jose, Calif.) and Ehsan Najafabadi (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A storage device, and a method for operating a storage device. In some embodiments, the storage device includes storage media, and the method includes: determining, by the storage device, that the storage device is in a first fault state from which recovery is possible by power cycling the sto...