US Patent Issued to SAMSUNG ELECTRONICS on April 29 for "Semiconductor devices having a graphene pattern between the first conductive pattern and the bit line capping" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,880, issued on April 29, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).

"Semiconductor devices having a graphene pattern between the first conductive pattern and the bit line capping" was invented by Seran Oh (Hwaseong-si, South Korea), Sukhoon Kim (Hwaseong-si, South Korea), Sungjoo An (Yongin-si, South Korea) and Yeonuk Kim (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate including a plurality of active patterns and a bit line intersecting at least one of the plurality of active patterns on the substrate and extending in a first direction. The bit line includes a first co...