US Patent Issued to SAMSUNG ELECTRONICS on April 29 for "Semiconductor device having multi-bridge channel field-effect transistor including source/drain pattern with a plurality of semiconductor patterns" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,908, issued on April 29, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device having multi-bridge channel field-effect transistor including source/drain pattern with a plurality of semiconductor patterns" was invented by Seo Jin Jeong (Incheon, South Korea), Do Hyun Go (Hwaseong-si, South Korea), Seok Hoon Kim (Suwon-si, South Korea), Jung Taek Kim (Yongin-si, South Korea), Pan Kwi Park (Incheon, South Korea), Moon Seung Yang (Hwaseong-si, South Korea), Min-Hee Choi (Suwon-si, South Korea) and Ryong Ha (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an active pa...