ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,796, issued on April 29, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor device and image sensor including the same" was invented by Jonghyun Go (Seongnam-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a semiconductor device and an image sensor including the same. The semiconductor device includes a device isolation layer defining an active region on a semiconductor substrate, a gate electrode crossing the active region, a gate insulating pattern between the gate electrode and the semiconductor substrate, a first impurity region provided at a first side of the gate electrode in the ac...