ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,888, issued on April 29, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Memory device" was invented by Seungmin Song (Seoul, South Korea), Beyounghyun Koh (Seoul, South Korea), Yongjin Kwon (Yongin-si, South Korea), Kangmin Kim (Hwaseong-si, South Korea), Jaehoon Shin (Suwon-si, South Korea), Joongshik Shin (Yongin-si, South Korea), Sungsoo Ahn (Hwaseong-si, South Korea) and Seunghwan Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate; a stacked structure including a plurality of gate layers and a plurality of interlayer insulating layers that are alternately stacked on ...