ALEXANDRIA, Va., June 9 -- United States Patent no. 12,290,007, issued on April 29, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Magnetic memory device and method of operating the same" was invented by Siyeon Cho (Hwaseong-si, South Korea), Taeyoung Kim (Seoul, South Korea), Hyunmog Park (Seoul, South Korea), Bongyong Lee (Suwon-si, South Korea) and Yukio Hayakawa (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a loop-type magnetic track having a first part and a second part that are arranged in a counterclockwise direction, a first conductive line on a top surface of the first part, and a second conductive line on a bottom ...