ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,845, issued on April 22, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).
"Semiconductor light emitting device having reflective electrode on multilayer insulating structure" was invented by Minkyun Kim (Seongnam-si, South Korea), Donghyuk Joo (Suwon-si, South Korea), Inho Kim (Hwaseong-si, South Korea), Seungmi Son (Hwaseong-si, South Korea) and Sungwook Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor l...