ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,827, issued on April 22, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (South Korea).
"Semiconductor devices" was invented by Gyu-Hwan Ahn (Gunpo-si, South Korea), Sung-Soo Kim (Hwaseong-si, South Korea), Chae-Ho Na (Changwon-si, South Korea), Dong-Hyun Roh (Suwon-si, South Korea) and Sang-Jin Hyun (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes active fins on a substrate, a first isolation pattern on the substrate, the first isolation pattern extending on a lower sidewall of each of the active fins, a third isolation pattern including an upper portion extending into the first isolation pattern and...