US Patent Issued to SAMSUNG ELECTRONICS on April 22 for "Infrared detector and infrared image sensor including the same" (Russian Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,284,427, issued on April 22, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Infrared detector and infrared image sensor including the same" was invented by Maxim Vladimirovich Ryabko (Moscow), Anton Nikolaevich Sofronov (St. Petersburg, Russia) and Sergey Nikolaevich Koptyaev (Nizhniy Tagil, Russia).

According to the abstract* released by the U.S. Patent & Trademark Office: "An infrared detector includes a substrate in which a void is formed, a micro-resonator suspended over the void, an infrared absorber on an upper surface of the micro-resonator, a thermal isolation bridge supporting the micro-resonator, a first waveguide optically coupled with the micro-reso...