US Patent Issued to SAMSUNG ELECTRONICS on April 22 for "Full-chip cell critical dimension correction method and method of manufacturing mask using the same" (South Korean Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,282,249, issued on April 22, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Full-chip cell critical dimension correction method and method of manufacturing mask using the same" was invented by Kisung Kim (Seoul, South Korea), Donggon Woo (Yongin-si, South Korea), Heejun Lee (Seoul, South Korea) and Dongho Kim (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A full-chip cell critical dimension (CD) correction method and a method of manufacturing a mask by using the same are provided. The full-chip cell CD correction method includes receiving a database (DB) about a full-shot; analyzing a hierarchy of the ...