US Patent Issued to SAMSUNG ELECTRONICS on April 22 for "Ferroelectric thin-film structure and electronic device including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,629, issued on April 22, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Ferroelectric thin-film structure and electronic device including the same" was invented by Yunseong Lee (Osan-si, South Korea), Jinseong Heo (Seoul, South Korea), Sangwook Kim (Suwon-si, South Korea), Taehwan Moon (Suwon-si, South Korea) and Sanghyun Jo (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a ferroelectric thin-film structure including a semiconductor substrate, a first ferroelectric layer on the semiconductor substrate, and a second ferroelectric layer on the semiconductor substrate. The second ferroelectric la...