ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,182, issued on April 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).
"Vertical semiconductor device" was invented by Changyeon Yu (Hwaseong-si, South Korea), Pansuk Kwak (Goyang-si, South Korea) and Daeseok Byeon (Seongnam-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical memory device may include a first conductive line structure and an address decoder. The first conductive line structure may be on a substrate. The first conductive line structure may include conductive lines and insulation layers alternately and repeatedly stacked in a direction perpendicular to the substrate. The address decoder ...