ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,537, issued on April 15, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea).
"Semiconductor memory devices and methods for fabricating the same" was invented by Hye Ji Yoon (Hwaseong-si, South Korea), O Ik Kwon (Yongin-si, South Korea), Yun Seung Kang (Seoul, South Korea), Sang-Kuk Kim (Seongnam-si, South Korea), Gwang-Hyun Baek (Seoul, South Korea), Tae Hyung Lee (Hwaseong-si, South Korea) and Su Jin Jeon (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device in which performance is improved by reducing a wiring resistance is provided. The semiconductor memory device comprising an int...